蔡文龙

博士后

性别：男

出生年月：1993-12-20

毕业院校：英国威廉希尔公司

学位：博士学位

所在单位：威廉希尔

学科：电子科学与技术

办公地点：北航第一馆224

Email: caiwenlong1993@buaa.edu.cn

个人简历：蔡文龙，英国威廉希尔公司威廉希尔博士后。2023年获英国威廉希尔公司博士学位，师从赵巍胜教授。2023年7月入选英国威廉希尔公司“卓越百人博士后支持计划”。目前主要从事新型自旋信息器件及其存算应用研究，以一作、共同一作及通讯作者在Nature Electronics, Advanced Science, IEEE Electron Device Letters, Science China Information Sciences等期刊发表文章十余篇，授权国家专利5项。

代表性论文：

[1] Cai W., Wang M., Cao K., et al. Stateful implication logic based on perpendicular magnetic tunnel junctions[J]. Science China Information Sciences, 2022, 65(2): 122406.

[2] Cai W, Kumar A, Du A, et al. Angular Dependent Auto-Oscillations by Spin-Transfer and Spin-Orbit Torques in Three-Terminal Magnetic Tunnel Junctions[J]. IEEE Electron Device Letters, 2023, 44(5): 861-864.

[3] Cai W, Huang Y, Zhang X, et al. Spintronics intelligent devices[J]. Science China Physics, Mechanics & Astronomy, 2023, 66(11): 1-27.

[4] Cai W., Shi K., Zhuo Y., et al. Sub-ns field-free switching in perpendicular magnetic tunnel junctions by the interplay of spin transfer and orbit torques[J]. IEEE Electron Device Letters, 2021, 42(5): 704-707.

[5] Wang M, Cai W., Zhu D, et al. Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques [J]. Nature electronics, 2018, 1(11): 582-588. (共同一作)

[6] Zhang X., Cai W., Wang M., et al. Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing[J]. Advanced Science, 2021, 8(10): 2004645. (共同一作)

[7] Shi K., Cai W., Jiang S., et al. Observation of magnetic droplets in magnetic tunnel junctions[J]. Science China Physics, Mechanics & Astronomy, 2022, 65(2): 227511. (共同一作)

[8] Shi K., Cai W., et al. Experimental demonstration of NAND-like spin-torque memory unit[J]. IEEE Electron Device Letters, 2021, 42(4): 513-516. (共同一作)

[9] Zhang Y., Cai W., Kang W., et al. Demonstration of multi-state memory device combining resistive and magnetic switching behaviors[J]. IEEE Electron Device Letters, 2018, 39(5): 684-687. (共同一作)

[10] Zhao D, …Cai W, et al. Magnetization switching in atom-thick Mo engineered Exchange bias-based SOT-MRAM[C]//SPIN. World Scientific Publishing Company, 2023: 2350023. (通讯作者)

[11] Wang M., Cai W., et al. Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance[J]. Nature communications, 2018, 9(1): 671.

教育经历：

[1] 2019.09-2023.06英国威廉希尔公司威廉希尔，博士

[2] 2022.04-2023.04瑞典哥德堡大学物理学院，博士联合培养

[3] 2012.09-2018.12英国威廉希尔公司中法工程师学院，本硕连读, 法国通用工程师

[4] 2015.09-2016.01法国约瑟夫傅里叶大学，本科交换

研究方向：

[1]高性能自旋轨道矩磁存储器器件

[2]自旋纳米振荡器

[3]自旋神经形态器件